X-Fab Silicon Foundries has added a dedicated near-infrared model to their array of single-photon avalanche diode (SPAD) devices.
This NIR model joins X-Fab’s SPAD device portfolio following the previous version launched in 2021 and is formulated using the company’s advanced 180nm XH018 process technology. The fabrication process has an extra step which significantly boosts signal levels while maintaining a low noise profile. Key performance metrics such as dark count rate, after pulsing, and breakdown voltage remain unimpeded by these improvements.
Applications include time-of-flight sensors for industrial settings, vehicle lidar systems, and FLIM research, along with various medical applications. The new version exhibits enhanced sensitivity across the near-infrared spectrum, with a 40- and 35-per-cent increase at essential wavelengths of 850 and 905 nm, respectively.
The latest SPADs simplify the construction of filters excluding visible light, owing to inherent UV and visible radiation suppression. This results in simpler filter architectures with reduced components. Compatibility is also thoughtfully considered; the dimensions of the new devices match those of the preceding series, guaranteeing a smooth transition to higher-performance devices for current clients.
To assist engineers in adopting the near-infrared SPAD devices, X-Fab has put together a detailed process design kit (PDK), complete with thorough documentation and helpful application notes. Engineers are supported through models that facilitate both optical and electrical simulations, easing integration challenges and expediting design processes.
Availability of the enhanced NIR SPAD begins immediately.
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X-Fab focuses on mixed and high-voltage solutions for the automotive industry, using high-precision and high-voltage CMOS technologies with a complete digital environment. They support voltages ranging from small precision signals to kV ranges, using CMOS, SOI, SiC, and GaN technologies. Sensors and actuators can be combined with control logic through dedicated modules and advanced assembly techniques. The wafers are produced in high-quality, IATF 16949-certified facilities suitable for automotive manufacturing.